? semiconductor components industries, llc, 2013 june, 2013 ? rev. 20 1 publication order number: mm3z2v4st1/d mm3zxxxst1g series, szmm3zxxxst1g series zener voltage regulators 200 mw sod ? 323 surface mount tight tolerance portfolio this series of zener diodes is packaged in a sod ? 323 surface mount package that has a power dissipation of 200 mw. they are designed to provide voltage regulation protection and are especially attractive in situations where space is at a premium. they are well suited for applications such as cellular phones, hand ? held portables, and high density pc boards. specification features ? standard zener breakdown voltage range ? 3.3 v to 36 v ? steady state power rating of 200 mw ? small body outline dimensions: ? 0.067 x 0.049 (1.7 mm x 1.25 mm) ? low body height: 0.035 (0.9 mm) ? package weight: 4.507 mg/unit ? esd rating of class 3 (> 16 kv) per human body model ? tight tolerance v z ? aec ? q101 qualified and ppap capable ? sz prefix for automotive and other applications requiring unique site and control change requirements ? these devices are pb ? free, halogen free/bfr free and are rohs compliant* mechanical characteristics: case: void-free, transfer-molded plastic finish: all external surfaces are corrosion resistant maximum case temperature for soldering purposes: 260 c for 10 seconds leads: plated with pb ? sn or sn only (pb ? free) polarity: cathode indicated by polarity band flammability rating: ul 94 v ? 0 mounting position: any *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. device package shipping ? ordering information sod ? 323 case 477 style 1 1 cathode 2 anode marking diagram see specific marking information in the device marking column of the electrical characteristics table on page 3 of this data sheet. device marking information xx = specific device code m = date code* = pb ? free package ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our t ape and reel packaging specifications brochure, brd8011/d. http://onsemi.com mm3zxxxst1g sod ? 323 (pb ? free) 3,000 / tape & reel mm3zxxxst3g sod ? 323 (pb ? free) 10,000 / tape & reel xxm *date code orientation may vary depending upon manufacturing location. (note: microdot may be in either location) szmm3zxxxst1g sod ? 323 (pb ? free) 3,000 / tape & reel
mm3zxxxst1g series, szmm3zxxxst1g series http://onsemi.com 2 maximum ratings rating symbol max unit total device dissipation fr ? 5 board, (note 1) @ t a = 25 c derate above 25 c p d 200 1.5 mw mw/ c thermal resistance from junction ? to ? ambient r ja 635 c/w junction and storage temperature range t j , t stg ? 65 to +150 c stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above t he recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may af fect device reliability. 1. fr ? 4 minimum pad. electrical characteristics (t a = 25 c unless otherwise noted, v f = 0.9 v max. @ i f = 10 ma for all types) symbol parameter v z reverse zener voltage @ i zt i zt reverse current z zt maximum zener impedance @ i zt i zk reverse current z zk maximum zener impedance @ i zk i r reverse leakage current @ v r v r reverse voltage i f forward current v f forward voltage @ i f v z maximum temperature coefficient of v z c max. capacitance @v r = 0 and f = 1 mhz zener voltage regulator i f v i i r i zt v r v z v f
mm3zxxxst1g series, szmm3zxxxst1g series http://onsemi.com 3 electrical characteristics (v f = 0.9 max @ i f = 10 ma for all types) device* device marking test current izt ma zener voltage vz z zk i z = 0.5 ma max z zt i z = izt @ 10% mod max max ir @ vr d vz /dt (mv/k) @ i zt1 = 5 ma c pf max @ v r = 0 f = 1 mhz min max a v min max mm3z3v0st1g t4 5.0 2.90 3.11 1000 100 10 1.0 ? 3.5 0 450 mm3z3v3st1g t5 5.0 3.32 3.53 1000 95 5.0 1.0 ? 3.5 0 450 mm3z3v9st1g t7 5.0 3.89 4.16 1000 90 3.0 1.0 ? 3.5 ? 2.5 450 mm3z4v3st1g t8 5.0 4.17 4.43 1000 90 3.0 1.0 ? 3.5 0 450 mm3z4v7st1g t9 5.0 4.55 4.75 800 80 3.0 2.0 ? 3.5 0.2 260 MM3Z5V1ST1G ta 5.0 4.98 5.2 500 60 2.0 2.0 ? 2.7 1.2 225 mm3z5v6st1g tc 5.0 5.49 5.73 200 40 1.0 2.0 ? 2.0 2.5 200 mm3z6v2st1g te 5.0 6.06 6.33 100 10 3.0 4.0 0.4 3.7 185 mm3z6v8st1g tf 5.0 6.65 6.93 160 15 2.0 4.0 1.2 4.5 155 mm3z7v5st1g tg 5.0 7.28 7.6 160 15 1.0 5.0 2.5 5.3 140 mm3z8v2st1g th 5.0 8.02 8.36 160 15 0.7 5.0 3.2 6.2 135 mm3z9v1st1g tk 5.0 8.85 9.23 160 15 0.5 6.0 3.8 7.0 130 mm3z10vst1g wb 5.0 9.80 10.20 160 15 0.5 6.0 4.5 8.0 130 mm3z12vst1g tn 5.0 11.74 12.24 80 25 0.1 8.0 6.0 10 130 mm3z13vst1g tq 5.0 12.91 13.49 80 30 0.1 8.0 7.0 11 120 mm3z15vst1g tp 5.0 14.34 14.98 80 40 0.1 11 8.8 12.7 130 mm3z16vst1g tu 5.0 15.85 16.51 80 40 0.05 11.2 10.4 14 105 mm3z18vst1g tw 5.0 17.56 18.35 80 45 0.05 12.6 12.4 16 100 mm3z22vst1g wp 5.0 21.54 22.47 100 55 0.05 15.4 16.4 20 85 mm3z24vst1g wt 5.0 23.72 24.78 120 70 0.05 16.8 18.4 22 80 mm3z27vst1g wq 5.0 26.19 27.53 300 80 0.05 18.9 21.4 25.3 70 mm3z33vst1g wr 5.0 32.15 33.79 300 80 0.05 23.2 27.4 33.4 70 mm3z36vst1g wu 5.0 35.07 36.87 500 90 0.05 25.2 30.4 37.4 70 mm3z39vst1g wn 2.0 38.22 39.78 500 130 0.05 27.3 33.4 41.2 45 *include sz-prefix devices where applicable.
mm3zxxxst1g series, szmm3zxxxst1g series http://onsemi.com 4 typical characteristics v z , nominal zener voltage figure 1. effect of zener voltage on zener impedance 10 3.0 z zt , dynamic impedance ( ) 1000 100 10 1.0 t j = 25 c i z(ac) = 0.1 i z(dc) f = 1 khz i z = 1 ma 5 ma v f , forward voltage (v) figure 2. typical forward voltage 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 i f , forward current (ma) 1000 100 10 1.0 150 c 75 c 25 c 0 c c, capacitance (pf) v z , nominal zener voltage (v) figure 3. typical capacitance 1000 100 10 1.0 10 4.0 bias at 50% of v z nom t a = 25 c 0 v bias 1 v bias i r , leakage current ( a) v z , nominal zener voltage (v) figure 4. typical leakage current 1000 100 10 1.0 0.1 0.01 0.001 0.0001 0.00001 10 5.0 0 +150 c +25 c ? 55 c v z , zener voltage (v) 100 10 1.0 0.1 0.01 10 8.0 6.0 4.0 2.0 0 t a = 25 c i z , zener current (ma) figure 5. zener voltage versus zener current (v z up to 9 v) temperature ( c) 25 0 100 40 20 0 power dissipation (%) 50 75 100 125 150 80 60 figure 6. steady state power derating
mm3zxxxst1g series, szmm3zxxxst1g series http://onsemi.com 5 package dimensions sod ? 323 case 477 ? 02 issue h 1.60 0.063 0.63 0.025 mm inches scale 10:1 0.83 0.033 2.85 0.112 *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* style 1: pin 1. cathode 2. anode h e notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: millimeters. 3. lead thickness specified per l/f drawing with solder plating. 4. dimensions a and b do not include mold flash, protrusions or gate burrs. 5. dimension l is measured from end of radius. note 3 d 1 2 b e a3 a1 a c note 5 l h e dim min nom max millimeters a 0.80 0.90 1.00 a1 0.00 0.05 0.10 a3 0.15 ref b 0.25 0.32 0.4 c 0.089 0.12 0.177 d 1.60 1.70 1.80 e 1.15 1.25 1.35 0.08 2.30 2.50 2.70 l 0.031 0.035 0.040 0.000 0.002 0.004 0.006 ref 0.010 0.012 0.016 0.003 0.005 0.007 0.062 0.066 0.070 0.045 0.049 0.053 0.003 0.090 0.098 0.105 min nom max inches on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5817 ? 1050 mm3z2v4st1/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
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